| 1 |
A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies
Wolfframm D, Evans DA, Westwood DI, Riley J
Journal of Crystal Growth, 216(1-4), 119, 2000 |
| 2 |
In-Situ Analysis of the Tribochemical Films Formed by SiC Sliding Against Mo in Partial Pressures of SO2, O-2, and H2S Gases
Singer IL, Lemogne T, Donnet C, Martin JM
Journal of Vacuum Science & Technology A, 14(1), 38, 1996 |
| 3 |
Real-Time Scanning Microprobe Reflection High-Energy Electron-Diffraction Observations of III-V Growth During Molecular-Beam Epitaxy
Isu T, Morishita Y, Goto S, Nomura Y, Katayama Y
Journal of Vacuum Science & Technology A, 12(4), 1176, 1994 |
| 4 |
Effects of As4 Flux on Reflection High-Energy Electron-Diffraction Oscillations During Growth of GaAs at Low-Temperatures
Ibbetson JP, Mirin RP, Mishra UK, Gossard AC
Journal of Vacuum Science & Technology B, 12(2), 1050, 1994 |
| 5 |
Reflection High-Energy Electron-Diffraction Intensity Oscillations During Molecular-Beam Epitaxy on Rotating Substrates
Vanderwagt JP, Harris JS
Journal of Vacuum Science & Technology B, 12(2), 1236, 1994 |
