검색결과 : 12건
No. | Article |
---|---|
1 |
Self-assembly of pi-conjugated azomethine oligomers by sequential deposition of monomers from solution Rosink JJWM, Blauw MA, Geerligs LJ, van der Drift E, Rousseeuw BAC, Radelaar S, Sloof WG, Fakkeldij EJM Langmuir, 16(10), 4547, 2000 |
2 |
Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6 Jongste JF, Oosterlaken TGM, Janssen GCAM, Radelaar S Journal of the Electrochemical Society, 146(1), 167, 1999 |
3 |
Ultrahigh depth resolution secondary ion mass spectrometry with sub-keV grazing O-2(+) beams Alkemade PFA, Jiang ZX, Visser CCG, Radelaar S, Arnoldbik WM Journal of Vacuum Science & Technology B, 16(1), 373, 1998 |
4 |
TiN reactive sputter deposition studied as a function of the pumping speed Heuvelman WM, Helderman P, Janssen GCAM, Radelaar S Thin Solid Films, 332(1-2), 335, 1998 |
5 |
Orientation of aluminum nuclei on Si(100) and Si(111) Bisch C, Boellaard E, Janssen GCAM, Alkemade PFA, Radelaar S Thin Solid Films, 336(1-2), 84, 1998 |
6 |
Characterization of an N-Type Si/SiGe Modulation-Doped Field-Effect Transistor Kuznetsov VI, Werner K, Radelaar S, Metselaar JW Thin Solid Films, 294(1-2), 263, 1997 |
7 |
The Hydrogen Reduction of Wf6 - A Kinetic-Study Based on in-Situ Partial-Pressure Measurements Oosterlaken TG, Leusink GJ, Janssen GC, Radelaar S Journal of the Electrochemical Society, 143(5), 1668, 1996 |
8 |
The Effect of Doping Atoms on the Kinetics of Self-Limiting Tungsten Film Growth on Silicon by Reduction of Tungsten Hexafluoride Vanderjeugd CA, Leusink GJ, Oosterlaken TG, Jongste JF, Janssen GC, Radelaar S Journal of the Electrochemical Society, 142(4), 1326, 1995 |
9 |
Technology for High-Performance N-Channel SiGe Modulation-Doped Field-Effect Transistors Kuznetsov VI, Vonveen R, Vanderdrift E, Werner K, Verbruggen AH, Radelaar S Journal of Vacuum Science & Technology B, 13(6), 2892, 1995 |
10 |
Capillary Arrays with Variable Channel Density - An Improved Gas Injection System Scheinowitz DA, Werner K, Radelaar S Journal of Vacuum Science & Technology A, 12(6), 3228, 1994 |