화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Self-assembly of pi-conjugated azomethine oligomers by sequential deposition of monomers from solution
Rosink JJWM, Blauw MA, Geerligs LJ, van der Drift E, Rousseeuw BAC, Radelaar S, Sloof WG, Fakkeldij EJM
Langmuir, 16(10), 4547, 2000
2 Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6
Jongste JF, Oosterlaken TGM, Janssen GCAM, Radelaar S
Journal of the Electrochemical Society, 146(1), 167, 1999
3 Ultrahigh depth resolution secondary ion mass spectrometry with sub-keV grazing O-2(+) beams
Alkemade PFA, Jiang ZX, Visser CCG, Radelaar S, Arnoldbik WM
Journal of Vacuum Science & Technology B, 16(1), 373, 1998
4 TiN reactive sputter deposition studied as a function of the pumping speed
Heuvelman WM, Helderman P, Janssen GCAM, Radelaar S
Thin Solid Films, 332(1-2), 335, 1998
5 Orientation of aluminum nuclei on Si(100) and Si(111)
Bisch C, Boellaard E, Janssen GCAM, Alkemade PFA, Radelaar S
Thin Solid Films, 336(1-2), 84, 1998
6 Characterization of an N-Type Si/SiGe Modulation-Doped Field-Effect Transistor
Kuznetsov VI, Werner K, Radelaar S, Metselaar JW
Thin Solid Films, 294(1-2), 263, 1997
7 The Hydrogen Reduction of Wf6 - A Kinetic-Study Based on in-Situ Partial-Pressure Measurements
Oosterlaken TG, Leusink GJ, Janssen GC, Radelaar S
Journal of the Electrochemical Society, 143(5), 1668, 1996
8 The Effect of Doping Atoms on the Kinetics of Self-Limiting Tungsten Film Growth on Silicon by Reduction of Tungsten Hexafluoride
Vanderjeugd CA, Leusink GJ, Oosterlaken TG, Jongste JF, Janssen GC, Radelaar S
Journal of the Electrochemical Society, 142(4), 1326, 1995
9 Technology for High-Performance N-Channel SiGe Modulation-Doped Field-Effect Transistors
Kuznetsov VI, Vonveen R, Vanderdrift E, Werner K, Verbruggen AH, Radelaar S
Journal of Vacuum Science & Technology B, 13(6), 2892, 1995
10 Capillary Arrays with Variable Channel Density - An Improved Gas Injection System
Scheinowitz DA, Werner K, Radelaar S
Journal of Vacuum Science & Technology A, 12(6), 3228, 1994