화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure
Shin C, Kim JK, Shin C, Kim JK, Yu HY
Current Applied Physics, 16(6), 618, 2016
2 Temperature sensitivity analysis of dopingless charge-plasma transistor
Shrivastava V, Kumar A, Sahu C, Singh J
Solid-State Electronics, 117, 94, 2016
3 Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method
Shin YH, Yun I
Solid-State Electronics, 126, 136, 2016
4 Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs
Lu WF, Wang GY, Sun LL
Solid-State Electronics, 105, 63, 2015