검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs Eneman G, Collaert N, Veloso A, De Keersgieter A, De Meyer K, Hoffmann TY, Horiguchi N, Thean A Solid-State Electronics, 74, 19, 2012 |
| 2 |
Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth Terashima K, Tanabe A, Nakagawa T, Mori K, Ikarashi T, Nakatsuru J, Date H, Ikemoto M, Tatsumi T Applied Surface Science, 254(19), 6165, 2008 |
| 3 |
The vertical replacement-gate (VRG) MOSFET Hergenrother JM, Oh SH, Nigam T, Monroe D, Klemens FP, Kornblit A Solid-State Electronics, 46(7), 939, 2002 |