| 1 |
Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach
Muller J, Bothe K, Herlufsen S, Hannebauer H, Ferre R, Brendel R
Solar Energy Materials and Solar Cells, 106, 76, 2012 |
| 2 |
Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application
Khan F, Singh SN, Husain M
Solar Energy, 85(9), 2288, 2011 |
| 3 |
A novel parameter extraction method for the one-diode solar cell model
Kim W, Choi W
Solar Energy, 84(6), 1008, 2010 |
| 4 |
The switch of the worst case on NBTI and hot-carrier reliability for 0.13 mu m pMOSFETs
Tu CH, Chen SY, Lin MH, Wang MC, Wu SH, Chou S, Ko J, Huang HS
Applied Surface Science, 254(19), 6186, 2008 |
| 5 |
A detailed modeling method for photovoltaic cells
Chenni R, Makhlouf M, Kerbache T, Bouzid A
Energy, 32(9), 1724, 2007 |
| 6 |
Effect of controlled dopant distribution in thin silicon solar cell
Majumdar D, Dutta SK, Chatterjee S, Saha H
Solar Energy Materials and Solar Cells, 81(4), 459, 2004 |
| 7 |
Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction
Ortiz-Conde A, Estrada M, Cerdeira A, Sanchez FJG, De Mercato G
Solid-State Electronics, 45(2), 223, 2001 |
