| 1 |
Effects of self-heating on the microwave performance of SiGeHBTs
Sampathkumaran R, Roenker KP
Solid-State Electronics, 49(8), 1292, 2005 |
| 2 |
Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode
Srivastava S, Roenker KP
Solid-State Electronics, 48(3), 461, 2004 |
| 3 |
Analysis of parasitic barriers formed at SiGe/Si heterojunctions due to p-n junction displacement
Roenker KP, Todorova D, Breed A
Solid-State Electronics, 46(10), 1473, 2002 |
| 4 |
Simulation and design of SiGeHBTs for power amplification at 10 GHz
Todorova D, Mathur N, Roenker KP
Solid-State Electronics, 46(10), 1485, 2002 |
| 5 |
An analytical model for SiC MESFETs
Murray SP, Roenker KP
Solid-State Electronics, 46(10), 1495, 2002 |
| 6 |
Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p-n junction displacement
Breed A, Roenker KP, Todorova D
Solid-State Electronics, 46(12), 2199, 2002 |
| 7 |
A Gummel-Poon model for pnp heterojunction bipolar transistors with a compositionally graded base
Datta S, Roenker KP, Cahay MM
Solid-State Electronics, 44(6), 991, 2000 |
| 8 |
Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors
Datta S, Roenker KP, Cahay MM, Lunardi LM
Solid-State Electronics, 44(7), 1331, 2000 |
| 9 |
Simulation study of high injection effects and parasitic barrier formation in SiGeHBTs operating at high current densities
Mushini P, Roenker KP
Solid-State Electronics, 44(12), 2239, 2000 |
