검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 mu m grown by MOVPE on InP substrate Grasse C, Mueller M, Gruendl T, Boehm G, Roenneberg E, Wiecha P, Rosskopf J, Ortsiefer M, Meyer R, Amann MC Journal of Crystal Growth, 370, 217, 2013 |
| 2 |
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 mu m Boehm G, Grau M, Dier O, Windhorn K, Roenneberg E, Rosskopf J, Shau R, Meyer R, Ortsiefer M, Amann MC Journal of Crystal Growth, 301, 941, 2007 |