검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ostwald Ripening-Mediated Grafting of Metal-Organic Frameworks on a Single Colloidal Nanocrystal to Form Uniform and Controllable MXF Liu Y, Yang Y, Sun YJ, Song JB, Rudawski NG, Chen XY, Tan WH Journal of the American Chemical Society, 141(18), 7407, 2019 |
| 2 |
Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness Chen YM, Rudawski NG, Lambers E, Orazem ME Journal of the Electrochemical Society, 164(9), C563, 2017 |
| 3 |
Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries Rudawski NG, Yates BR, Holzworth MR, Jones KS, Elliman RG, Volinsky AA Journal of Power Sources, 223, 336, 2013 |
| 4 |
SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F International Journal of Hydrogen Energy, 37(18), 13783, 2012 |
| 5 |
Insights for void formation in ion-implanted Ge Darby BL, Yates BR, Rudawski NG, Jones KS, Kontos A, Elliman RG Thin Solid Films, 519(18), 5962, 2011 |
| 6 |
Effect of n- and p-type dopants on patterned amorphous regrowth Morarka S, Rudawski NG, Law ME, Jones KS, Elliman RG Journal of Vacuum Science & Technology B, 28(1), C1F1, 2010 |
| 7 |
Level set modeling of the orientation dependence of solid phase epitaxial regrowth Morarka S, Rudawski NG, Law ME Journal of Vacuum Science & Technology B, 26(1), 357, 2008 |
| 8 |
Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers Rudawski NG, Jones KS, Elliman RG Journal of Vacuum Science & Technology B, 26(1), 435, 2008 |
| 9 |
Effect of oxide on trench edge defect formation in ion-implanted silicon Burbure N, Rudawski NG, Jones KS Electrochemical and Solid State Letters, 10(6), H184, 2007 |