검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Using a quartz crystal microbalance for low energy ion beam etching studies Doemling MF, Lin B, Rueger NR, Oehrlein GS, Haring RA, Lee YH Journal of Vacuum Science & Technology A, 18(1), 232, 2000 |
| 2 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 17(1), 26, 1999 |
| 3 |
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor Rueger NR, Doemling MF, Schaepkens M, Beulens JJ, Standaert TEFM, Oehrlein GS Journal of Vacuum Science & Technology A, 17(5), 2492, 1999 |
| 4 |
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing Schaepkens M, Rueger NR, Beulens JJ, Li X, Standaert TEFM, Matsuo PJ, Oehrlein GS Journal of Vacuum Science & Technology A, 17(6), 3272, 1999 |
| 5 |
High density fluorocarbon etching of silicon in an inductively coupled plasma : Mechanism of etching through a thick steady state fluorocarbon layer Standaert TEFM, Schaepkens M, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 16(1), 239, 1998 |
| 6 |
Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3 Doemling MF, Rueger NR, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology B, 16(4), 1998, 1998 |
| 7 |
Role of Steady-State Fluorocarbon Films in the Etching of Silicon Dioxide Using Chf3 in an Inductively-Coupled Plasma Reactor Rueger NR, Beulens JJ, Schaepkens M, Doemling MF, Mirza JM, Standaert TE, Oehrlein GS Journal of Vacuum Science & Technology A, 15(4), 1881, 1997 |