검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method Dubois C, Prudon G, Gautier B, Dupuy JC Applied Surface Science, 255(4), 1377, 2008 |
| 2 |
Application of deconvolution to boron depth profiling in SiGe heterostructures Yang MH, Goodman GG Thin Solid Films, 508(1-2), 276, 2006 |
| 3 |
Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-Ultra de Chambost E, Merkulov A, Peres P, Rasser B, Schuhmacher M Applied Surface Science, 231-2, 949, 2004 |