검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching Wellmann PJ, Sakwe SA, Oehlschlager F, Hoffmann V, Zeimer U, Knauer A Journal of Crystal Growth, 310(5), 955, 2008 |
| 2 |
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (vol 289, pg 520, 2006) Sakwe SA, Muller R, Wellmann PJ Journal of Crystal Growth, 299(1), 234, 2007 |
| 3 |
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC Sakwe SA, Muller R, Wellmann PJ Journal of Crystal Growth, 289(2), 520, 2006 |
| 4 |
Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M Materials Science Forum, 483, 25, 2005 |
| 5 |
Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability Sakwe SA, Herro ZG, Wellmann PJ Materials Science Forum, 483, 283, 2005 |
| 6 |
Analysis of graphitization during physical vapor transport growth of silicon carbide Wellmann PJ, Herro Z, Sakwe SA, Masri P, Bogdanov M, Karpov S, Kulik A, Ramm M, Makarov Y Materials Science Forum, 457-460, 55, 2004 |
| 7 |
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC Weingartner R, Bickermann M, Herro Z, Kunecke U, Sakwe SA, Wellmann PJ, Winnacker A Materials Science Forum, 433-4, 333, 2002 |