검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Muller GS, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G Journal of Crystal Growth, 352(1), 39, 2012 |
| 2 |
Origin of basal plane bending in hexagonal silicon carbide single crystals Lee JW, Skowronski M, Sanchez EK, Chung G Journal of Crystal Growth, 310(18), 4126, 2008 |
| 3 |
Surface-damage-induced threading dislocations in 6H-SiC layers grown by physical vapor transport Liu JQ, Sanchez EK, Skowronski M Journal of the Electrochemical Society, 150(3), G223, 2003 |
| 4 |
Assessment of polishing-related surface damage in silicon carbide Sanchez EK, Ha S, Grim J, Skowronski M, Vetter WM, Dudley M, Bertke R, Mitchel WC Journal of the Electrochemical Society, 149(2), G131, 2002 |
| 5 |
Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG Materials Science Forum, 389-3, 35, 2002 |
| 6 |
The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A Materials Science Forum, 389-3, 71, 2002 |
| 7 |
Analysis of sub-surface damage-induced threading dislocations in physical vapor transport growth of 6H-SiC Liu JQ, Sanchez EK, Skowronski M Materials Science Forum, 389-3, 415, 2002 |
| 8 |
Structure of 2D-nucleation-induced stacking faults in 6H-SiC Liu JQ, Sanchez EK, Skowronski M Materials Science Forum, 389-3, 435, 2002 |
| 9 |
Thermal decomposition cavities in physical vapor transport grown SiC Sanchez EK, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M Materials Science Forum, 338-3, 55, 2000 |
| 10 |
Nucleation of dislocations during physical vapor transport growth of silicon carbide Sanchez EK, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M Materials Science Forum, 338-3, 63, 2000 |