| 1 |
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks
Schamm S, Coulon PE, Miao S, Volkos SN, Lu LH, Lamagna L, Wiemer C, Tsoutsou D, Scarel G, Fanciulli M
Journal of the Electrochemical Society, 156(1), H1, 2009 |
| 2 |
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
Bonafos C, Coffin H, Schamm S, Cherkashin N, Ben Assayag G, Dimitrakis P, Normand P, Carrada M, Paillard V, Claverie A
Solid-State Electronics, 49(11), 1734, 2005 |
| 3 |
Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures
Vamvakas VE, Davazoglou D, Berjoan R, Schamm S, Vahlas C
Thin Solid Films, 429(1-2), 77, 2003 |
| 4 |
Correlations Between Gas-Phase Supersaturation, Nucleation Process and Physicochemical Characteristics of Silicon-Carbide Deposited from Si-C-H-Cl System on Silica Substrates
Lespiaux D, Langlais F, Naslain R, Schamm S, Sevely J
Journal of Materials Science, 30(6), 1500, 1995 |
| 5 |
Physicochemical Properties of SiC-Based Ceramics Deposited by Low-Pressure Chemical-Vapor-Deposition from Ch3Sicl3-H-2
Loumagne F, Langlais F, Naslain R, Schamm S, Dorignac D, Sevely J
Thin Solid Films, 254(1-2), 75, 1995 |
