화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Fullerene C-60 as an endohedral molecule within an inorganic supramolecule
Scheer M, Schindler A, Merkle R, Johnson BP, Linseis M, Winter R, Anson CE, Virovets AV
Journal of the American Chemical Society, 129(44), 13386, 2007
2 Room-temperature ultrahigh vacuum bonding of Ge/GaAs p-n heterojunction wafer using 300 eV hydrogen ion beam surface cleaning
Razek N, Schindler A
Journal of Vacuum Science & Technology A, 25(5), 1480, 2007
3 Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry
Leibiger G, Gottschalch V, Razek N, Schindler A, Schubert M
Thin Solid Films, 455-56, 231, 2004
4 Large area smoothing of optical surfaces by low-energy ion beams
Frost F, Fechner R, Ziberi B, Flamm D, Schindler A
Thin Solid Films, 459(1-2), 100, 2004
5 Influence of preparation parameters for low-energy ion beam nitridation of III-V semiconductor surfaces
Hecht JD, Frost F, Sidorenko A, Hirsch D, Neumann H, Schindler A, Krasnikow S, Zhang L, Chasse T
Solid-State Electronics, 47(3), 413, 2003
6 GaAs surface cleaning by low energy hydrogen ion beam treatment
Razek N, Otte K, Chasse T, Hirsch D, Schindler A, Frost F, Rauschenbach B
Journal of Vacuum Science & Technology A, 20(4), 1492, 2002
7 Evaluation of AFM tips using nanometer-sized structures induced by ion sputtering
Frost F, Hirsch D, Schindler A
Applied Surface Science, 179(1-4), 8, 2001
8 In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy
Hecht JD, Frost F, Chasse T, Hirsch D, Neumann H, Schindler A, Bigl F
Applied Surface Science, 179(1-4), 196, 2001
9 Ultrahigh-rate plasma jet chemical etching of silicon
Arnold T, Boehm G, Schindler A
Journal of Vacuum Science & Technology A, 19(5), 2586, 2001
10 Chemical bath deposition of CdS buffer layer: prospects of increasing materials yield and reducing waste
Hariskos D, Powalla M, Chevaldonnet N, Lincot D, Schindler A, Dimmler B
Thin Solid Films, 387(1-2), 179, 2001