| 1 |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Ghumman CAA, Moutinho AMC, Santos A, Teodoro OMND, Tolstogouzov A
Applied Surface Science, 258(7), 2490, 2012 |
| 2 |
Functionality of novel black silicon based nanostructured surfaces studied by TOF SIMS
Talian I, Aranyosiova M, Orinak A, Velic D, Hasko D, Kaniansky D, Orinakova R, Hubner J
Applied Surface Science, 256(7), 2147, 2010 |
| 3 |
Probability of ionization of sputtered particles as a function of their energy - Part I: Negative Si- ions
Kudriavtsev Y, Villegas A, Gallardo S, Asomoza R
Applied Surface Science, 254(7), 2059, 2008 |
| 4 |
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D
Applied Surface Science, 255(4), 1440, 2008 |
| 5 |
Development of a high lateral resolution TOF-SIMS apparatus for single particle analysis
Sakamoto T, Koizumi M, Kawasaki J, Yamaguchi J
Applied Surface Science, 255(4), 1617, 2008 |
| 6 |
Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling
Chi PH, Gillen G
Applied Surface Science, 231-2, 127, 2004 |
| 7 |
Quantitative TOF-SIMS imaging of DNA microarrays produced by bubble jet printing technique and the role of TOF-SIMS in life science industry
Hashimoto H, Nakamura K, Takase H, Okamoto T, Yamamoto N
Applied Surface Science, 231-2, 385, 2004 |
| 8 |
Apparent and real transient effects in SIMS depth profiling using oxygen bombardment
Wittmaack K
Applied Surface Science, 203, 20, 2003 |
