화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Ultra-thin SiNx in superlattice via nitridation of a-Si in-situ hot wire chemical vapor deposition
Rai DK, Solanki CS, Balasubramaniam KR
Thin Solid Films, 565, 101, 2014
2 Temperature dependence of the electronic gaps of semiconductors
Cardona M, Kremer RK
Thin Solid Films, 571, 680, 2014
3 Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy
Bietti S, Cavigli L, Minari S, Adorno S, Isella G, Vinattieri A, Gurioli M, Sanguinetti S
Journal of Crystal Growth, 378, 497, 2013
4 Implications of transient changes of optical and surface properties of solids during femtosecond laser pulse irradiation to the formation of laser-induced periodic surface structures
Bonse J, Rosenfeld A, Kruger J
Applied Surface Science, 257(12), 5420, 2011
5 Metal-Free Disordered Vertical Sub-Micron Silicon Wires Produced from Electrochemical p-Type Porous Silicon Layers
Gautier G, Defforge T, Kouassi S, Coudron L
Electrochemical and Solid State Letters, 14(8), D81, 2011
6 ZnO Thin-Film Transistors with SiNx/SiOx Stacked Gate Insulators: Trap Densities and N2O Flow Rate Dependence
Kimura M, Furuta M, Kamada Y, Hiramatsu T, Matsuda T, Furuta H, Li CY, Fujita S, Hirao T
Electrochemical and Solid State Letters, 14(9), H365, 2011
7 Self-assembled GaAs local artificial substrates on Si by droplet epitaxy
Bietti S, Somaschini C, Koguchi N, Frigeri C, Sanguinetti S
Journal of Crystal Growth, 323(1), 267, 2011
8 A Solid-State Electrochemical Reaction as the Origin of Magnetism at Oxide Nanoparticle Interfaces
Martin-Gonzalez MS, Garcia MA, Lorite I, Costa-Kramer JL, Rubio-Marcos F, Carmona N, Fernandez JF
Journal of the Electrochemical Society, 157(3), E31, 2010
9 Porous Silicon Formation in Fluorohydrogenate Ionic Liquids
Raz O, Shmueli Z, Hagiwara R, Ein-Eli Y
Journal of the Electrochemical Society, 157(3), H281, 2010
10 Cooling power of field emission from the n-type silicon semiconductor
Chung MS, Yoon BG, Mayer A, Weis BL, Miskovsky NM, Cutler PH
Journal of Vacuum Science & Technology B, 28(2), C2A19, 2010