화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(001) substrates
Marcal LAB, Richard MI, Persichetti L, Favre-Nicolin V, Renevier H, Fanfoni M, Sgarlata A, Schulli TU, Malachias A
Applied Surface Science, 466, 801, 2019
2 Formation of extended thermal etch pits on annealed Ge wafers
Persichetti L, Fanfoni M, De Seta M, Di Gaspare L, Ottaviano L, Goletti C, Sgarlata A
Applied Surface Science, 462, 86, 2018
3 Fabrication of SiGe rings and holes on Si(001) by flash annealing
Persichetti L, Capasso A, Sgarlata A, Quatela A, Kaciulis S, Mezzi A, Notarianni M, Motta N, Fanfoni M, Balzarotti A
Applied Surface Science, 283, 813, 2013
4 Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy
Persichetti L, Sgarlata A, Fanfoni M, Balzarotti A
Thin Solid Films, 543, 88, 2013
5 Ordering of Ge islands on Si(001) substrates patterned by nanoindentation
Persichetti L, Capasso A, Ruffell S, Sgarlata A, Fanfoni M, Motta N, Balzarotti A
Thin Solid Films, 519(13), 4207, 2011
6 Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (vol 369, pg 29, 2000)
Rosei F, Motta N, Sgarlata A, Capellini G, Boscherini F
Thin Solid Films, 397(1-2), 296, 2001
7 Ge-Si intermixing in Ge quantum dots on Si
Boscherini F, Capellini G, Di Gaspare L, De Seta M, Rosei F, Sgarlata A, Motta N, Mobilio S
Thin Solid Films, 380(1-2), 173, 2000
8 Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS
Rosei F, Motta N, Sgarlata A, Capellini G, Boscherini F
Thin Solid Films, 369(1-2), 29, 2000
9 Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique
Paolesse R, Di Natale C, Dall'Orto VC, Macagnano A, Angelaccio A, Motta N, Sgarlata A, Hurst J, Rezzano I, Mascini M, D'Amico A
Thin Solid Films, 354(1-2), 245, 1999
10 Scanning tunneling microscopy studies of Ge/Si films on Si(111) : From layer by layer to quantum dots
Motta N, Sgarlata A, Calarco R, Cal JC, Nguyen Q, Prosposito P, Balzarotti A, De Crescenzi M
Journal of Vacuum Science & Technology B, 16(3), 1555, 1998