검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs Sheu CJ, Jang SL Solid-State Electronics, 47(4), 705, 2003 |
| 2 |
A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices Chyau CG, Jang SL, Sheu CJ Solid-State Electronics, 44(3), 487, 2000 |
| 3 |
A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs Jang SL, Sheu CJ Solid-State Electronics, 44(7), 1305, 2000 |
| 4 |
A compact drain-current model for stacked-gate flash memory cells Jang SL, Sheu CJ, Twu CB Solid-State Electronics, 44(8), 1447, 2000 |
| 5 |
A physics-based electron gate current model for fully depleted SOI MOSFETs Sheu CJ, Jang SL Solid-State Electronics, 44(10), 1799, 2000 |
| 6 |
A MOSFET gate current model with the direct tunneling mechanism Sheu CJ, Jang SL Solid-State Electronics, 44(10), 1819, 2000 |