검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Yamajo S, Yoon S, Liang J, Sodabanlu H, Watanabe K, Sugiyama M, Yasui A, Ikenaga E, Shigekawa N Applied Surface Science, 473, 627, 2019 |
| 2 |
Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate Mitsuhara M, Watanabe N, Yokoyama H, Iga R, Shigekawa N Journal of Crystal Growth, 449, 86, 2016 |
| 3 |
Growth temperature dependent critical thickness for phase separation in thick (similar to 1 mu m) InxGa1-xN (x=0.2-0.4) Yamamoto A, Hasan TM, Kodama K, Shigekawa N, Kuzuhara M Journal of Crystal Growth, 419, 64, 2015 |
| 4 |
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N Solid-State Electronics, 49(8), 1352, 2005 |