화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Evaluation of carbonized layers for 3C-SiC/Si epitaxial growth by ellipsometry
Shimizu H, Ohba T, Hisada K
Materials Science Forum, 389-3, 335, 2002
2 Hetero-epitaxial growth of 3C-SiC on carbonized silicon substrates
Shimizu H, Hisada K
Materials Science Forum, 433-4, 229, 2002
3 Structural study of GaN layers grown on carbonized Si(111) substrates
Morales FM, Ponce A, Molina SI, Araujo D, Garcia R, Ristic J, Sanchez-Garcia MA, Calleja E, Cimalla V, Pezoldt J
Materials Science Forum, 433-4, 1003, 2002