| 1 |
Application of a-Si/mu c-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells
Tao K, Li Q, Hou CX, Jiang SA, Wang J, Jia R, Sun Y, Li YT, Jin Z, Liu XY
Solar Energy, 144, 735, 2017 |
| 2 |
Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks
Oh J
Current Applied Physics, 14, S69, 2014 |
| 3 |
Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layers
Hajjaji A, Ben Rabha M, Janene N, Gaidi M, Bessais B, El Khakani MA
Applied Surface Science, 258(20), 8046, 2012 |
| 4 |
Optical characterisation of PTCDA films grown on passivated semiconductor substrates
Kampen TU, Salvan G, Friedrich M, Tenne DA, Park S, Zahn DRT
Applied Surface Science, 166(1-4), 387, 2000 |
| 5 |
Thermally induced interface degradation in (100) and (111) Si/SiO2 analyzed by electron spin resonance
Stesmans A, Afanas'ev VV
Journal of Vacuum Science & Technology B, 16(6), 3108, 1998 |
| 6 |
Interfacial Properties of Metal-Insulator-Semiconductor Capacitors on GaAs(110)
Huang LJ, Rajesh K, Lau WM, Ingrey S, Landheer D, Noel JP, Lu ZH
Journal of Vacuum Science & Technology A, 13(3), 792, 1995 |
