검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Design, Fabrication, and Characterization of 1.5 M Omega cm(2), 800 V 4H-SiC n-type Schottky Barrier Diodes Furno M, Bonani F, Ghione G, Ferrero S, Porro S, Mandracci P, Scaltrito L, Perrone D, Richieri G, Merlin L Materials Science Forum, 483, 941, 2005 |
| 2 |
5.0 kV 4H-SiC SEMOSFET with low RonS of 88 m Omega cm(2) Sugawara Y, Asano K, Takayama D, Ryu S, Singh R, Palmour J, Hayashi T Materials Science Forum, 389-3, 1199, 2002 |
| 3 |
The electrothermal behavior of 4H-SiC Schottky diodes at forward bias considering single pulse and pulsed current operation Felsl HP, Wachutka G, Rupp R Materials Science Forum, 433-4, 839, 2002 |
| 4 |
SiC-power rectifiers Held R, Fullmann M, Niemann E Materials Science Forum, 338-3, 1407, 2000 |