검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Epitaxial growth of fully relaxed Si0.75Ge0.25 on SOI substrate Xue ZY, Wei X, Zhang B, Wu AM, Zhang MA, Wang X Applied Surface Science, 257(11), 5021, 2011 |
| 2 |
High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth Takehiro S, Sakuraba M, Tsuchiya T, Murota J Thin Solid Films, 517(1), 346, 2008 |
| 3 |
Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T Applied Surface Science, 224(1-4), 254, 2004 |