검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications Wasyluk J, Ge Y, Wurster K, Lenski M, Reichel C Solid-State Electronics, 110, 23, 2015 |
| 2 |
Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition Yamamoto Y, Heinemann B, Murota J, Tillack B Thin Solid Films, 557, 14, 2014 |
| 3 |
The performance improvement evaluation for SiGe-based IR detectors Kolandouz M, Farniya AA, Ostling M, Radarnson HH Solid-State Electronics, 62(1), 72, 2011 |
| 4 |
Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe Yamamoto Y, Kopke K, Weidner G, Tillack B Solid-State Electronics, 53(8), 824, 2009 |
| 5 |
Kinetics of epitaxial growth of Si and SiGe films on (110)Si substrates Sugiyama N, Moriyama Y, Nakaharai S, Tezuka T, Mizuno T, Takagi S Applied Surface Science, 224(1-4), 188, 2004 |
| 6 |
Emerging silicon-on-nothing (SON) devices technology Monfray S, Skotnicki T, Fenouillet-Beranger C, Carriere N, Chanemougame D, Morand Y, Descombes S, Talbot A, Dutartre D, Jenny C, Mazoyer P, Palla R, Leverd F, Le Friec Y, Pantel R, Borel S, Louis D, Buffet N Solid-State Electronics, 48(6), 887, 2004 |
| 7 |
SiGe(C) epitaxial technologies - issues and prospectives Grasby TJ, Whall TE, Parker EHC Thin Solid Films, 412(1-2), 44, 2002 |
| 8 |
Epitaxy and device behaviour of collector-up SiGeHBTs with a partial p-type collector van den Oever LCM, Nanver LK, Scholtes TLM, van Zeijl HW, van Noort WD, Ren QW, Slotboom JW Solid-State Electronics, 45(11), 1899, 2001 |
| 9 |
Atomic control of doping during SiGe epitaxy Tillack B Thin Solid Films, 318(1-2), 1, 1998 |