검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교 김재은, 이경동, 강윤묵, 이해석, 김동환 Korean Journal of Materials Research, 26(1), 47, 2016 |
| 2 |
Defect states in amorphous SiNx:H compounds using thermally stimulated exo-electron emission Heo S, Park H, Chung J, Lee HI, Park J, Kyoung YK, Kim YS, Kim K, Byun S, Jeon WS, Park GS, Choi P, Choi BD, Lee D, Cho HY, Kang HJ Thin Solid Films, 616, 850, 2016 |
| 3 |
Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells Wu XS, Zhang ZF, Liu Y, Chu XN, Li YP Solar Energy, 111, 277, 2015 |
| 4 |
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer Zhao L, Zuo YH, Zhou CL, Li HL, Diao HW, Wang WJ Solar Energy, 85(3), 530, 2011 |
| 5 |
Silicon nitride layers of various n-content: Technology, properties and structure Jurzecka-Szymacha M, Boszkowicz P, Tkacz-Smiech K Thin Solid Films, 520(4), 1308, 2011 |
| 6 |
SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells Wei MC, Chang SJ, Tsia CY, Liu CH, Chen SC Solar Energy, 80(2), 215, 2006 |
| 7 |
High temperature line electrode assembly for continuous substrate flow VHFPECVD Schade K, Stahr F, Kuske J, Rohlecke S, Steinke O, Stephan U, Dekkers HFW Thin Solid Films, 502(1-2), 59, 2006 |
| 8 |
Positron annihilation studies in amorphous silicon nitride Gordo PM, Naia MD, Gill CL, de Lima AP, Lavareda G, de Carvalho CN, Amaral A, Kajcsos Z Materials Science Forum, 445-6, 90, 2004 |
| 9 |
Dependence of TFT performance on the dielectric characteristics Lavareda G, de Carvalho CN, Amaral A, Fortunato E, Ramos AR, da Silva ME Thin Solid Films, 427(1-2), 71, 2003 |
| 10 |
High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties Hugon MC, Delmotte F, Agius B, Irene EA Journal of Vacuum Science & Technology B, 17(4), 1430, 1999 |