검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
An innovative large scale integration of silicon nanowire-based field effect transistors Legallais M, Nguyen TTT, Mouis M, Salem B, Robin E, Chenevier P, Ternon C Solid-State Electronics, 143, 97, 2018 |
| 2 |
A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer Liaw YG, Liao WS, Wang MC, Lin CL, Zhou B, Gu HS, Li DS, Zou XC Solid-State Electronics, 126, 46, 2016 |
| 3 |
Facet engineering for SiGe/Si stressors in advanced CMOS technology Kasim J, Reichel C, Dilliway G, Bai B, Zakowsky N Solid-State Electronics, 110, 19, 2015 |
| 4 |
HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks Li XY, Yajima T, Nishimura T, Nagashio K, Toriumi A Thin Solid Films, 557, 272, 2014 |
| 5 |
High rate hot-wire chemical vapor deposition of silicon thin films using a stable TaC covered graphite filament Martin IT, Teplin CW, Stradins P, Landry M, Shub M, Reedy RC, To B, Portugal JV, Mariner JT Thin Solid Films, 519(14), 4585, 2011 |
| 6 |
Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film Ha JB, Yun SW, Lee JH Current Applied Physics, 10(1), 41, 2010 |
| 7 |
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI Urban C, Sandow C, Zhao QT, Knoch J, Lenk S, Mantl S Solid-State Electronics, 54(2), 185, 2010 |
| 8 |
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation Urban C, Emam M, Sandow C, Zhao QT, Fox A, Mantl S, Raskin JP Solid-State Electronics, 54(9), 877, 2010 |
| 9 |
Degradation and silicidation of Ta- and W-filaments for different filament temperatures Kniffler N, Pflueger A, Scheller D, Schroeder B Thin Solid Films, 517(12), 3424, 2009 |
| 10 |
Self-encapsulation of single-texture COSi(2) nanolayer by TaSi(2) Akhavan O, Azimirad R, Moshfegh AZ Thin Solid Films, 516(18), 6008, 2008 |