검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes Mahajan A, Skromme BJ Solid-State Electronics, 49(6), 945, 2005 |
| 2 |
Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy Ding Y, Park KB, Pelz JP, Palle KC, Mikhov MK, Skromme BJ Journal of Vacuum Science & Technology A, 22(4), 1351, 2004 |
| 3 |
Characterization of double stacking faults induced by thermal processing of heavily N-doped 4H-SiC substrates Skromme BJ, Mikhov MK, Chen L, Samson G, Wang R, Li C, Bhat I Materials Science Forum, 457-460, 581, 2004 |
| 4 |
Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults Skromme BJ, Chen L, Mikhov MK, Yamane H, Aoki M, DiSalvo FJ Materials Science Forum, 457-460, 1613, 2004 |
| 5 |
Optical characterization of bulk GaN grown by a Na-Ga melt technique Skromme BJ, Palle K, Poweleit CD, Yamane H, Aoki M, DiSalvo FJ Journal of Crystal Growth, 246(3-4), 299, 2002 |
| 6 |
Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers Skromme BJ, Palle K, Poweleit CD, Bryant LR, Vetter WM, Dudley M, Moore K, Gehoski T Materials Science Forum, 389-3, 455, 2002 |
| 7 |
Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC Skromme BJ, Luckowski E, Moore K, Clemens S, Resnick D, Gehoski T, Ganser D Materials Science Forum, 338-3, 1029, 2000 |