검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D Solid-State Electronics, 50(1), 44, 2006 |
| 2 |
Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs Tilke AT, Rothenhausser S, Rochel M, Stahrenberg K, Goller K, Junge A, Pribil A, Foste B, Wiedemann J, Tegeler M, Berkner J, Wagner C, Dahl C Solid-State Electronics, 48(12), 2243, 2004 |
| 3 |
Molecular-Beam Epitaxy-Grown ZnSe Studied by Reflectance Anisotropy Spectroscopy and Reflection High-Energy Electron-Diffraction Zettler JT, Stahrenberg K, Richter W, Wenisch H, Jobst B, Hommel D Journal of Vacuum Science & Technology B, 14(4), 2757, 1996 |