검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC Camarda M, La Magna A, Severino A, La Via F Thin Solid Films, 518, S159, 2010 |
| 2 |
Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor Jeong JK, Na HJ, Choi J, Hwang CS, Kim HJ, Bahng W Journal of Crystal Growth, 210(4), 629, 2000 |
| 3 |
An overview of SiC growth Matsunami H Materials Science Forum, 338-3, 125, 2000 |
| 4 |
Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor Jeong JK, Na HJ, Kim BS, Um MY, Kim HJ Thin Solid Films, 377-378, 567, 2000 |