화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SIC: Effects of channeling
Zolnai Z, Ster A, Khanh NQ, Kotai E, Posselt MH, Battistig G, Lohner T, Gyulai J
Materials Science Forum, 483, 637, 2005
2 Damage distributions induced by channeling implantation of nitrogen into 6H silicon carbide
Zolnai Z, Khanh NQ, Lohner T, Ster A, Kotai E, Vickridge I, Gyulai J
Materials Science Forum, 433-4, 645, 2002