화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III-V channel materials
Revelant A, Palestri P, Osgnach P, Semi L
Solid-State Electronics, 88, 54, 2013
2 Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
Sampedro C, Gamiz F, Donetti L, Godoy A
Solid-State Electronics, 70, 101, 2012
3 Multi-Subband Monte Carlo simulations of I-ON degradation due to fin thickness fluctuations in FinFETs
Serra N, Palestri P, Smit GDJ, Selmi L
Solid-State Electronics, 53(4), 424, 2009
4 A 2D non-parabolic six-moments model
Vasicek M, Cervenka J, Wagner M, Karner M, Grasser T
Solid-State Electronics, 52(10), 1606, 2008