화학공학소재연구정보센터
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No. Article
1 Morphological and electrical characterization of etched Si wafers
Palermo V, Susi E, Jones D
Journal of the Electrochemical Society, 151(9), G554, 2004
2 Surface modifications in Si after rapid thermal annealing
Castaldini A, Cavalcoli D, Cavallini A, Jones D, Palermo V, Susi E
Journal of the Electrochemical Society, 149(12), G633, 2002
3 Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film
Susi E, Castaldini A, Cavalcoli D, Cvallini A
Journal of the Electrochemical Society, 148(3), G150, 2001
4 Deep-Level Transient Spectroscopy Study of the Damage-Induced in N-Type Silicon by a Gate Oxide Etching in a Chf3/Ar Plasma
Adegboyega G, Perezquintana I, Poggi A, Susi E, Merli M
Journal of Vacuum Science & Technology B, 15(3), 623, 1997
5 Electrical-Properties of Rapid Thermal Annealing-Induced Defects in Silicon
Susi E, Poggi A, Madrigali M
Journal of the Electrochemical Society, 142(6), 2081, 1995
6 Study of the Electrical Active Defects Induced by Reactive Ion Etching in N-Type Silicon
Biavati M, Perezquintana I, Poggi A, Susi E
Journal of Vacuum Science & Technology B, 13(5), 2139, 1995
7 Rapid Thermal Annealing of P-Type Silicon - Correlation Between Deep-Level Transient Spectroscopy and Lifetime Measurements
Poggi A, Susi E, Butturi MA, Carotta MC
Journal of the Electrochemical Society, 141(3), 754, 1994