검색결과 : 7건
No. | Article |
---|---|
1 |
Morphological and electrical characterization of etched Si wafers Palermo V, Susi E, Jones D Journal of the Electrochemical Society, 151(9), G554, 2004 |
2 |
Surface modifications in Si after rapid thermal annealing Castaldini A, Cavalcoli D, Cavallini A, Jones D, Palermo V, Susi E Journal of the Electrochemical Society, 149(12), G633, 2002 |
3 |
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film Susi E, Castaldini A, Cavalcoli D, Cvallini A Journal of the Electrochemical Society, 148(3), G150, 2001 |
4 |
Deep-Level Transient Spectroscopy Study of the Damage-Induced in N-Type Silicon by a Gate Oxide Etching in a Chf3/Ar Plasma Adegboyega G, Perezquintana I, Poggi A, Susi E, Merli M Journal of Vacuum Science & Technology B, 15(3), 623, 1997 |
5 |
Electrical-Properties of Rapid Thermal Annealing-Induced Defects in Silicon Susi E, Poggi A, Madrigali M Journal of the Electrochemical Society, 142(6), 2081, 1995 |
6 |
Study of the Electrical Active Defects Induced by Reactive Ion Etching in N-Type Silicon Biavati M, Perezquintana I, Poggi A, Susi E Journal of Vacuum Science & Technology B, 13(5), 2139, 1995 |
7 |
Rapid Thermal Annealing of P-Type Silicon - Correlation Between Deep-Level Transient Spectroscopy and Lifetime Measurements Poggi A, Susi E, Butturi MA, Carotta MC Journal of the Electrochemical Society, 141(3), 754, 1994 |