| 1 |
Determination of trace level of cAMP in Locusta migratoria manilensis Meyen by HPLC with fluorescence derivation
Zhang LJ, Zhang HT, Wang JF, Pan CP
International Journal of Molecular Sciences, 7(8), 266, 2006 |
| 2 |
MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N-2 ambient
Tang XH, Zhang BL, Bo BX, Mei T, Chin MK
Journal of Crystal Growth, 288(1), 23, 2006 |
| 3 |
MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
Dong JR, Teng JH, Chua SJ, Foo BC, Wang YJ, Yin R
Journal of Crystal Growth, 289(1), 59, 2006 |
| 4 |
InGaAsP/GaInP/AlGaInP 0.8 mu m QW lasers grown by MOCVD using TBP and TBAs
Dong JR, Teng JH, Chua SJ, Wang YJ, Foo BC, Yin R
Journal of Crystal Growth, 281(2-4), 323, 2005 |
| 5 |
Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP
Campi R, Codato S, Soldani D
Journal of Crystal Growth, 265(3-4), 357, 2004 |
| 6 |
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
Neumann S, Prost W, Tegude FJ
Journal of Crystal Growth, 248, 130, 2003 |
| 7 |
X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
Journal of Crystal Growth, 248, 139, 2003 |
| 8 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
Moto A, Tanaka S, Tanabe T, Takagishi S
Solar Energy Materials and Solar Cells, 66(1-4), 585, 2001 |
| 9 |
The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP
Gerhardt M, Kirpal G, Schwabe R, Benndorf G, Gottschalch V
Thin Solid Films, 392(1), 85, 2001 |
| 10 |
Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers
Schlenker D, Miyamoto T, Chen Z, Koyama F, Iga K
Journal of Crystal Growth, 209(1), 27, 2000 |
