| 1 |
Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor
Choi T, Jung H, Lee CW, Mun KY, Kim SH, Park J, Kim H
Applied Surface Science, 343, 128, 2015 |
| 2 |
Performance evaluation of organic and titanium based working fluids for high-temperature heat pumps
Zamfirescu C, Dincer I, Naterer G
Thermochimica Acta, 496(1-2), 18, 2009 |
| 3 |
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
Xu AH, Qi M, Zhu FY, Sun H, Ai LK
Journal of Crystal Growth, 301, 212, 2007 |
| 4 |
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
Yarekha DA, Godey S, Wallart X, Colder H, Zaknoune M, Mollot F
Journal of Crystal Growth, 301, 217, 2007 |
| 5 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system
Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F
Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 6 |
Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy
Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF
Journal of Crystal Growth, 262(1-4), 113, 2004 |
| 7 |
Surface morphology of heavily carbon-doped GaAs grown by solid source molecular beam epitaxy
Tan KH, Yoon SF, Zhang R, Huang QF, Sun ZZ
Journal of Crystal Growth, 263(1-4), 105, 2004 |
| 8 |
Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy
Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF
Journal of Crystal Growth, 243(1), 41, 2002 |
| 9 |
Heavily carbon-doped GaAsSb grown on InP for HBT applications
Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR
Journal of Crystal Growth, 221, 59, 2000 |
| 10 |
A study of cylinder design for solid OMVPE sources
Timmons M, Rangarajan P, Stennick R
Journal of Crystal Growth, 221, 635, 2000 |
