검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors Pargon E, Martin M, Thiault J, Joubert O, Foucher J, Lill T Journal of Vacuum Science & Technology B, 26(3), 1011, 2008 |
| 2 |
Full three-dimensional characterization of 25 nm lines for chemically amplified resist simulation Landis S, Pauliac S, Foucher J, Thiault J, de Crecy F Journal of Vacuum Science & Technology B, 23(6), 2733, 2005 |
| 3 |
Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes Thiault J, Foucher J, Tortai JH, Joubert O, Landis S, Pauliac S Journal of Vacuum Science & Technology B, 23(6), 3075, 2005 |