검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics Tilke AT, Forster M, Schupke K, Freigofas A, Wagner C, Dahl C Journal of Vacuum Science & Technology B, 23(5), 1877, 2005 |
| 2 |
Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs Tilke AT, Rothenhausser S, Rochel M, Stahrenberg K, Goller K, Junge A, Pribil A, Foste B, Wiedemann J, Tegeler M, Berkner J, Wagner C, Dahl C Solid-State Electronics, 48(12), 2243, 2004 |