검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Cordier Y, Comyn R, Tottereau O, Frayssinet E, Portail M, Nemoz M Journal of Crystal Growth, 507, 220, 2019 |
| 2 |
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Cordier Y, Baron N, Chenot S, Vennegues P, Tottereau O, Leroux M, Semond F, Massies J Journal of Crystal Growth, 311(7), 2002, 2009 |
| 3 |
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P Journal of Crystal Growth, 310(5), 948, 2008 |
| 4 |
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111) Cordier Y, Portail M, Chenot S, Tottereau O, Zielinski M, Chassagne T Journal of Crystal Growth, 310(20), 4417, 2008 |
| 5 |
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Cordier Y, Azize M, Baron N, Chenot S, Tottereau O, Massies J Journal of Crystal Growth, 309(1), 1, 2007 |
| 6 |
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Cordier Y, Semond F, Hugues M, Natali F, Lorenzini P, Haas H, Chenot S, Laugt M, Tottereau O, Vennegues P, Massies J Journal of Crystal Growth, 278(1-4), 393, 2005 |
| 7 |
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes Tinjod F, de Mierry P, Lancefield D, Bougrioua Z, Laugt S, Tottereau O, Lorenzini P, Chenot S, Virey E, Kokta MR, Stone-Sundberg JL, Pauwels D Journal of Crystal Growth, 285(4), 450, 2005 |
| 8 |
Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy Schenk HPD, Vennegues P, Tottereau O, Riemann T, Christen J Journal of Crystal Growth, 258(3-4), 232, 2003 |
| 9 |
Full Si wafer conversion into bulk 3C-SiC Leycuras A, Tottereau O, Vicente P, Falkovsky L, Girard P, Camassel J Materials Science Forum, 389-3, 147, 2002 |
| 10 |
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) Lahreche H, Vennegues P, Tottereau O, Laugt M, Lorenzini P, Leroux M, Beaumont B, Gibart P Journal of Crystal Growth, 217(1-2), 13, 2000 |