화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Leonelli D, Vandooren A, Rooyackers R, De Gendt S, Heyns MM, Groeseneken G
Solid-State Electronics, 65-66, 28, 2011
2 Novel SONOS - type nonvolatile memory device with stacked tunneling and charge trapping layers
Tsai PH, Chang-Liao KS, Wu TY, Wang TK, Tzeng PJ, Lin CH, Lee LS, Tsai MJ
Solid-State Electronics, 52(10), 1573, 2008
3 Oxidation of hydrogen on oxidized platinum - Part I: The tunneling current
Bao JE, Macdonald DD
Journal of Electroanalytical Chemistry, 600(1), 205, 2007
4 An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide
Xu MZ, Tan CH
Solid-State Electronics, 46(1), 115, 2002
5 A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs
Jang SL, Sheu CJ
Solid-State Electronics, 44(7), 1305, 2000