화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD
Chen PPT, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR, Prince KE, Timmers H, Shrestha SK, Usher BF
Journal of Crystal Growth, 288(2), 241, 2006
2 Surface reactions of 1-propanethiol on GaAs(100)
Donev S, Brack N, Paris NJ, Pigram PJ, Singh NK, Usher BF
Langmuir, 21(5), 1866, 2005
3 Influence of N-2 background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs
Dieing T, Usher BF
Journal of Vacuum Science & Technology B, 22(3), 1544, 2004
4 Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(111)B surfaces
Gard FS, Riley JD, Leckey R, Usher BF
Applied Surface Science, 181(1-2), 94, 2001