검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE Panpech P, Vijarnwannaluk S, Sanorpim S, Ono W, Nakajima F, Katayama R, Onabe K Journal of Crystal Growth, 298, 107, 2007 |
| 2 |
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R Journal of Vacuum Science & Technology B, 18(3), 1594, 2000 |