화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency
Kovsh AR, Wang JS, Wei L, Shiao RS, Chi JY, Volovik BV, Tsatsul'nikov AF, Ustinov VM
Journal of Vacuum Science & Technology B, 20(3), 1158, 2002
2 Nonequilibrium spectroscopy of inter-and intraband transitions in quantum dot structures
Vorobjev LE, Glukhovskoy AV, Danilov SN, Panevin VY, Firsov DA, Fedosov NK, Shalygin VA, Andreev AD, Volovik BV, Ledentsov NN, Livshits DA, Ustinov VM, Tsatsul'nikov AF, Shernyakov YM, Grundmann M, Weber A, Fossard F, Julien FH
Materials Science Forum, 384-3, 39, 2002
3 Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Egorov VA, Polyakov NK, Tonkikh AA, Petrov VN, Cirlin GE, Volovik BV, Zhukov AE, Musikhin YG, Cherkashin NA, Ustinov VM
Applied Surface Science, 175, 243, 2001
4 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D
Journal of Crystal Growth, 227, 1155, 2001
5 Quantum dot lasers: breakthrough in optoelectronics
Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov NN, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Shernyakov YM, Volovik BV, Tsatsul'nikov AF, Kop'ev PS, Alferov ZI
Thin Solid Films, 367(1-2), 235, 2000