검색결과 : 5건
No. | Article |
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1 |
Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency Kovsh AR, Wang JS, Wei L, Shiao RS, Chi JY, Volovik BV, Tsatsul'nikov AF, Ustinov VM Journal of Vacuum Science & Technology B, 20(3), 1158, 2002 |
2 |
Nonequilibrium spectroscopy of inter-and intraband transitions in quantum dot structures Vorobjev LE, Glukhovskoy AV, Danilov SN, Panevin VY, Firsov DA, Fedosov NK, Shalygin VA, Andreev AD, Volovik BV, Ledentsov NN, Livshits DA, Ustinov VM, Tsatsul'nikov AF, Shernyakov YM, Grundmann M, Weber A, Fossard F, Julien FH Materials Science Forum, 384-3, 39, 2002 |
3 |
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs Egorov VA, Polyakov NK, Tonkikh AA, Petrov VN, Cirlin GE, Volovik BV, Zhukov AE, Musikhin YG, Cherkashin NA, Ustinov VM Applied Surface Science, 175, 243, 2001 |
4 |
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D Journal of Crystal Growth, 227, 1155, 2001 |
5 |
Quantum dot lasers: breakthrough in optoelectronics Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov NN, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Shernyakov YM, Volovik BV, Tsatsul'nikov AF, Kop'ev PS, Alferov ZI Thin Solid Films, 367(1-2), 235, 2000 |