검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing Trabzon L, Awadelkarim OO, Werking J Journal of Vacuum Science & Technology B, 17(5), 2216, 1999 |
| 2 |
Observation of channel shortening in n-metal-oxide-semiconductor field-effect transistors arising from interconnect plasma processing El Hassan MG, Awadelkarim OO, Werking J Journal of Vacuum Science & Technology A, 16(3), 1435, 1998 |
| 3 |
Gate leakage current : A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors Jiang J, Awadelkarim OO, Werking J Journal of Vacuum Science & Technology A, 16(3), 1664, 1998 |
| 4 |
Fowler-Nordheim Stressing of Polycrystalline Si Oxide Si Structures - Observation of Stress-Induced Defects in the Oxide, Oxide/Si Interface, and in Bulk Silicon Jiang J, Awadelkarim OO, Werking J, Bersuker G, Chan YD Journal of Vacuum Science & Technology A, 15(3), 875, 1997 |