| 1 |
Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure
Prasad C, Ferry DK, Wieder HH
Journal of Vacuum Science & Technology B, 22(4), 2059, 2004 |
| 2 |
Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
Vasileska D, Prasad C, Wieder HH, Ferry DK
Journal of Vacuum Science & Technology B, 21(4), 1903, 2003 |
| 3 |
Surface and interface barriers of InxGa1-xAs binary and ternary alloys
Wieder HH
Journal of Vacuum Science & Technology B, 21(4), 1915, 2003 |
| 4 |
Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system
Prasad C, Ferry DK, Vasileska D, Wieder HH
Journal of Vacuum Science & Technology B, 21(4), 1936, 2003 |
| 5 |
Surface and interface properties of In0.8Ga0.2As metal-insulator-semiconductor structures
Wieder HH, Sari H
Journal of Vacuum Science & Technology B, 20(4), 1759, 2002 |
| 6 |
DX centers in Al0.37Ga0.63As/GaAs and In0.34Al0.66As/In0.36Ga0.64As heterostructures
Wieder HH, Sari H
Journal of Vacuum Science & Technology B, 17(4), 1761, 1999 |
| 7 |
Influence of Surface and Interface States on the Electrical-Properties of an Al0.2Ga0.8As/In0.18Ga0.82As Delta-Modulation-Doped Heterostructure
Young AP, Wieder HH
Journal of Vacuum Science & Technology B, 14(3), 2293, 1996 |
| 8 |
Evidence for the Occupation of DX Centers in in(0.29)Al(0.71)as
Young AP, Wieder HH
Journal of Vacuum Science & Technology B, 14(4), 2944, 1996 |
| 9 |
Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterostructures Grown on GaAs Substrates Using Step-Graded InxGa1-xAs Buffers
Goldman RS, Kavanagh KL, Wieder HH
Journal of Vacuum Science & Technology B, 14(4), 3035, 1996 |
| 10 |
Consequences of DX Centers on the Charge-Distribution of Double-Quantum-Well, Delta-Modulation-Doped Heterostructures
Young AP, Chen JH, Wieder HH
Journal of Vacuum Science & Technology B, 13(2), 685, 1995 |
