| 1 |
Impact of ti content on Cu-TaN interfacial properties, Cu resistivity, and Ti diffusion in Cu/Cu(Ti)/TaN/Ta
Abe K, Yoshimaru M, Onoda H
Journal of the Electrochemical Society, 154(7), H659, 2007 |
| 2 |
Oxidation and reduction characteristics of sputter-deposited Cu thin films
Abe K, Harada Y, Yoshimaru M, Onoda H
Journal of the Electrochemical Society, 152(7), G577, 2005 |
| 3 |
Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate
Yoshimaru M, Takehiro S, Abe K, Onoda H
Journal of Vacuum Science & Technology A, 23(3), 564, 2005 |
| 4 |
Deoxidization of water desorbed from APCVD TEOS-O-3 SiO2 film with thin titanium cap film
Yoshimaru M, Yoshie T, Kageyama M, Onoda H
Journal of the Electrochemical Society, 151(11), G723, 2004 |
| 5 |
Texture and electromigration performance in damascene interconnects formed by reflow sputtered Cu film
Abe K, Harada Y, Yoshimaru M, Onoda H
Journal of Vacuum Science & Technology B, 22(2), 721, 2004 |
| 6 |
Effects of helium dilution of TEOS-O-2-C2F6 gas mixture on plasma-enhanced chemical vapor deposition of fluorine-doped silicon oxide film
Yoshimaru M, Koizumi S, Shimokawa K, Mori Y, Fukuda H, Matsuki N
Journal of Vacuum Science & Technology A, 17(2), 425, 1999 |
| 7 |
Effects of substrate on the growth characteristics of silicon oxide films deposited by atmospheric pressure chemical vapor deposition using Si(OC2H5)(4) and O-3
Yoshimaru M, Yoshie T
Journal of the Electrochemical Society, 145(8), 2847, 1998 |
| 8 |
Structure of Fluorine-Doped Silicon-Oxide Films Deposited by Plasma-Enhanced Chemical-Vapor-Deposition
Yoshimaru M, Koizumi S, Shimokawa K
Journal of Vacuum Science & Technology A, 15(6), 2908, 1997 |
| 9 |
Interaction Between Water and Fluorine-Doped Silicon-Oxide Films Deposited by Plasma-Enhanced Chemical-Vapor-Deposition
Yoshimaru M, Koizumi S, Shimokawa K
Journal of Vacuum Science & Technology A, 15(6), 2915, 1997 |
| 10 |
Microcrystal Growth on Borophosphosilicate Glass-Film During High-Temperature Annealing
Yoshimaru M, Wakamatsu H
Journal of the Electrochemical Society, 143(2), 666, 1996 |
