화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers
Yousif MYA, Nur O, Willander M, Patel CJ, Hernandez C, Campidelli Y, Bensahel D, Kyutt RN
Solid-State Electronics, 45(11), 1869, 2001
2 Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices
Yousif MYA, Nur O, Willander M
Solid-State Electronics, 45(11), 1931, 2001
3 On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology
Yousif MYA, Friesel M, Willander M, Lundgren P, Caymax M
Solid-State Electronics, 44(8), 1425, 2000