검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors Mairiaux E, Desplanque L, Wallart X, Zaknoune M Journal of Vacuum Science & Technology B, 28(1), 17, 2010 |
| 2 |
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications Yarekha DA, Godey S, Wallart X, Colder H, Zaknoune M, Mollot F Journal of Crystal Growth, 301, 217, 2007 |
| 3 |
Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy Vignaud D, Zaknoune M, Mollot F Journal of Crystal Growth, 291(1), 107, 2006 |
| 4 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 5 |
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy Wilk A, Zaknoune M, Godey S, Dhellemmes S, Gerard P, Chaix C, Mollot F Journal of Vacuum Science & Technology B, 22(3), 1444, 2004 |
| 6 |
Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates Medjdoub F, Dessenne F, Thobel JL, Zaknoune M, Theron D Solid-State Electronics, 48(5), 683, 2004 |
| 7 |
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A Solid-State Electronics, 44(6), 1021, 2000 |
| 8 |
0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs Zaknoune M, Cordier Y, Bollaert S, Ferre D, Theron D, Crosnier Y Solid-State Electronics, 44(9), 1685, 2000 |
| 9 |
Nonselective wet chemical etching of GaAs and AlGaInP for device applications Zaknoune M, Schuler O, Mollot F, Theron D, Crosnier Y Journal of Vacuum Science & Technology B, 16(1), 223, 1998 |