검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
EPR of deep Al and deep B in heavily Al-doped as grown 4H-SiC Ilyin IV, Mokhov EN, Baranov PG Materials Science Forum, 353-356, 521, 2001 |
| 2 |
Periodic doping of GaAs : Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy Hirose J, Suemune I, Ueta A, Machida H, Shimoyama N Journal of Crystal Growth, 214, 524, 2000 |
| 3 |
On the existence of deep levels of the accepters Ga and In and of the potential double accepters Zn and Cd in SiC Achtziger N, Grillenberger J, Uhrmacher M, Witthuhn W Materials Science Forum, 338-3, 749, 2000 |
| 4 |
Donors and accepters in SiC-studies with EPR and ENDOR Spaeth JM Materials Science Forum, 338-3, 785, 2000 |
| 5 |
Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide Greulich-Weber S, Marz M, Spaeth JM, Mokhov EN, Kalabukhova EN Materials Science Forum, 338-3, 809, 2000 |