| 1 |
The reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cells
Tong SC, Wang JS, Wu CB, Wu CH, Chang JT, Wei PC
Solar Energy Materials and Solar Cells, 144, 418, 2016 |
| 2 |
Formation Energies of Antiphase Boundaries in GaAs and GaP:An ab Initio Study
Rubel O, Baranovskii SD
International Journal of Molecular Sciences, 10(12), 5104, 2009 |
| 3 |
Pseudoelasticity in Fe3Al single crystals under cyclic loading
Yasuda HY, Yamaoka K, Umakoshi Y
Materials Science Forum, 512, 25, 2006 |
| 4 |
Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection
Chriqui Y, Largeau L, Patriarche G, Saint-Girons G, Bouchoule S, Sagnes I, Bensahel D, Campidelli Y, Kermarreeb O
Journal of Crystal Growth, 265(1-2), 53, 2004 |
| 5 |
Nucleation and grain growth of SrBi2Nb2O9 thin films
Yoo DC, Lee JY, Kim IS, Kim YT
Journal of Crystal Growth, 259(1-2), 79, 2003 |
| 6 |
Orientation dependence of pseudoelasticity in Fe3Al single crystals
Yasuda HY, Nakano K, Ueda M, Umakoshi Y
Materials Science Forum, 426-4, 1801, 2003 |
| 7 |
Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer
Nakazawa H, Suemitsu M
Materials Science Forum, 389-3, 351, 2002 |
| 8 |
Dependence of wet oxidation on the defect density in 3C-SiC
Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J
Materials Science Forum, 353-356, 663, 2001 |
