검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates Lucovsky G, Lee S, Long JP, Seo H, Luning J Applied Surface Science, 254(23), 7933, 2008 |