검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Chang PC, Monier C, Baca AG, Li NY, Newman F, Armour E, Hou HQ Solid-State Electronics, 46(4), 581, 2002 |
| 2 |
Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications Adriaensen S, Flandre D Solid-State Electronics, 46(9), 1339, 2002 |
| 3 |
Characteristics of epitaxial and implanted N-base 4H-SiC GTO thyristors Fedison JB, Chow TP Materials Science Forum, 353-356, 739, 2001 |
| 4 |
Energy band structure parameters and their data, derived from the measurements of minority carrier current density in heavily doped emitters of silicon devices vanCong H, Debiais G Solar Energy Materials and Solar Cells, 45(4), 385, 1997 |